SFH487P GaAlAs High Power Infrared Emitting Diode

Product Details

SFH487P GaAlAs High Power Infrared Emitting Diode
Siemens

2270

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Description:

SFH487P GaAlAs High Power Infrared Emitting Diode

A high power gallium aluminium arsenide infrared emitting diode, with a very wide beam, that emits radiation in the near infrared range (880nm peak).

The emitted radiation, which can be modulated, is generated by forward flowing current. The device is enclosed in a 3mm plastic package with a flat lens. Typical applications are in digital shaft encoders and light interruptors for DC and AC operation.

Specifications:

Peak wavelength emission

IF =10mA:

880nm

Radiant intensity

IF =100mA, tP = 20ms:

3· 15mW/sr

IF =1A, tP =100╡s:

35mW/sr

Total radiant flux

IF =100mA, tP = 20ms:

23mW

Spectral bandwidth IF =10mA:

80nm

Half angle:

▒65°

Reverse voltage:

Forward current:

100mA

Surge current (t =10╡s):

2· 5A

Forward voltage

IF =100mA tP = 20ms:

1· 30V

IF =1A tP =100╡s:

1· 9V

Breakdown voltage (IR =10╡A):

30V

Reverse current (VR = 5V):

0· 10╡A

Capacity (VR = 0V):

25pF

Power dissipation at 25°C:

200mW

Junction temperature:

100°C